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| 2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3417 Switching Regulator Applications * * * * * * Reverse-recovery time: trr = 60 ns (typ.) Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: iYfsi = 4.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 500 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 500 500 30 5 20 50 180 5 5 150 -55~150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 83.3 Unit C/W C/W Note 1: Please use devise on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 12.2 mH, RG = 25 W, IAR = 5 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA 2-10S1B Weight: 1.5 g (typ.) 1 2002-08-12 2SK3417 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 100 mA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Min 3/4 30 3/4 500 2.0 3/4 2.5 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 1.6 4.0 780 60 200 12 Max 10 3/4 100 3/4 4.0 1.8 3/4 3/4 3/4 pF Unit mA V mA V V W S 3/4 10 V VGS 0V 15 9 ID = 2.5 A VOUT 3/4 3/4 3/4 ns 3/4 3/4 3/4 3/4 3/4 Turn-ON time Switching time Fall time ton RL = 90 W VDD ~ 225 V - 25 tf 15 3/4 3/4 3/4 3/4 3/4 nC Duty < 1%, tw = 10 ms = Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD ~ 400 V, VGS = 10 V, ID = 5 A 60 17 11 6 3/4 3/4 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 60 0.1 Max 5 20 -1.7 3/4 3/4 Unit A A V ns mC Marking K3417 Type Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-12 2SK3417 ID - VDS 5 Common source Tc = 25C Pulse test 15 10 6.5 6 8 6.25 10 Common source Tc = 25C Pulse test ID - VDS 15 10 7 4 (A) ID 3 ID (A) 6.5 6 6 4 5.75 Drain current 2 5.5 5.25 Drain current 1 VGS = 5 V 2 5.5 VGS = 5 V 0 0 4 8 12 16 20 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 10 Common source VDS = 20 V Pulse test 20 VDS - VGS Common source Tc = 25C Pulse test (V) VDS Drain-source voltage 8 16 ID (A) 6 100 12 ID = 5 A 8 Drain current 4 2 Tc = 25C 0 0 2 4 6 8 10 4 2.5 1.2 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 10 Common source VDS = 20 V Pulse test Tc = 25C 100 10 Common source Tc = 20 C Pulse test RDS (ON) - ID (S) 5 3 iYfsi Forward transfer admittance Drain-source on resistance RDS (ON) (9) VGS = 10 V 15 1 1 0.5 0.3 0.1 0.1 1 10 0.1 0.1 1 10 Drain current ID (A) Drain current ID (A) 3 2002-08-12 2SK3417 RDS (ON) - Tc (9) 10 Common source VGS = 10 V Pulse test 10 Common source Tc = 25C Pulse test IDR - VDS RDS (ON) 8 Drain-source on resistance 6 Drain reverse current IDR (A) 1 4 ID = 5 A 2.5 2 1.2 10 5 3 -0.4 VGS = 0, 1 V -0.8 -1.2 -1.6 0 0 40 80 120 160 0.1 0 Channel temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 2000 1000 500 Ciss 5 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) 4 (pF) 300 3 Capacitance C 100 Coss 50 30 Common source VGS = 0 V f = 1 MHz Tc = 25C 0.3 0.5 1 3 5 10 2 1 10 Crss 0 0 40 80 120 160 5 0.1 30 50 100 Channel temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 50 500 Dynamic input/output characteristics Common source ID = 5 A Tc = 25C Pulse test VDS VDD = 100 V 300 200 200 VGS 100 4 400 8 12 20 (V) 40 400 16 30 20 10 Drain-source voltage VDS 10 0 40 80 120 160 200 0 0 5 10 15 20 0 25 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-08-12 Gate-source voltage VGS (V) Drain power dissipation PD (W) 2SK3417 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t Single pulse T Duty = t/T Rth (ch-c) = 3.57C/W 0.01 0.001 10 m 100 m 1m 10 m 100 m 1 10 Pulse width tw (S) Safe operating area 100 200 EAS - Tch 30 (mJ) Avalanche energy EAS 100 ms * 1 ms * ID max (pulsed) * 160 10 ID max (continuous) * 120 (A) 3 DC operation Tc = 25C Drain current ID 80 1 40 0.3 0 25 0.1 * 0.03 Single nonrepetitive pulse Tc = 25C 50 75 100 125 150 Channel temperature (initial) Tch (C) Curves must be derated linearly with increase in temperature. VDSS max 100 1000 0.01 1 10 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 90 V, L = 12.2 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-12 2SK3417 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-12 This datasheet has been download from: www..com Datasheets for electronics components. |
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